Loizos Efthymiou

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

Loizos Efthymiou, Giorgia Longobardi, Gianluca Camuso et al. · Applied Physics Letters · 2017 · 152 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

Loizos Efthymiou, Karthick Murukesan, Giorgia Longobardi et al. · IEEE Electron Device Letters · 2019 · 122 citations

Gate Drain Capacitance, Wide-bandgap Semiconductor, Electrical Engineering +14

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi et al. · 2016 · 31 citations · Full text

Sic Diode, Semiconductor Technology, Electrical Engineering +15

On the Challenges of Reliable Threshold Voltage Measurement in Ohmic and Schottky Gate p-GaN HEMTs

Karthick Murukesan, Loizos Efthymiou, Florin Udrea · IEEE Journal of the Electron Devices Society · 2021 · 24 citations · Full text

Electrical Engineering, Vth Instability, Engineering +10

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Loizos Efthymiou, Gianluca Camuso, Giorgia Longobardi et al. · Energies · 2017 · 22 citations · Full text

Electrical Engineering, Engineering, Power Device +12