V. Pathirana

Multi-Channel Monolithic-Cascode HEMT (MC²-HEMT): A New GaN Power Switch up to 10 kV

Ming Xiao, Yunwei Ma, Zhonghao Du et al. · 2021 IEEE International Electron Devices Meeting (IEDM) · 2021 · 54 citations

Engineering, Electrical Engineering, Electronic Materials +16

Experimental, analytical and numerical investigation of non-linearity of SOI diode temperature sensors at extreme temperatures

Andrea De Luca, V. Pathirana, S. Z. Ali et al. · Sensors and Actuators A Physical · 2014 · 42 citations

Engineering, Electrical Engineering, Microelectronics +13

800V lateral IGBT in bulk Si for low power compact SMPS applications

T. Trajković, N. Udugampola, V. Pathirana et al. · 2013 · 27 citations

Engineering, Electrical Engineering, Materials Science +14

Development, characterisation and simulation of wafer bonded Si-on-SiC substrates

Peter Michael Gammon, C.W. Chan, Fan Li et al. · Materials Science in Semiconductor Processing · 2017 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low-Loss 800-V Lateral IGBT in Bulk Si Technology Using a Floating Electrode

V. Pathirana, N. Udugampola, Tanya Trajkovic et al. · IEEE Electron Device Letters · 2018 · 21 citations · Full text

Engineering, Electrical Engineering, Microelectronics +11