Zhonghao Du - Concepedia

Author

Zhonghao Du

University of Southern California ORCID

Also Known As

Du, Zhonghao, Z. Du, Zhonghao Du

Publications

591

Citations

H-Index

Concepts

All Affiliations

University of Southern California Virginia Tech Nanopolis Suzhou (China)United States Naval Research Laboratory Qorvo (United States)

About

Zhonghao Du is an author at University of Southern California specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	397
2	Applied Physics	11	12	397
3	Electrical Engineering	11	11	376
4	Natural Sciences	1	1	21
5	Computer Engineering	1	1	48

Zhonghao Du

Publications

492

Citations

H-Index

Page 1

	Year	Citations
10-kV Ga<sub>2</sub>O<sub>3</sub> Charge-Balance Schottky Rectifier Operational at 200 °C Yuan Qin, Ming Xiao, Matthew Porter, IEEE Electron Device Letters Wide-bandgap SemiconductorKv SbdElectrical EngineeringElectronic DevicesEngineering	2023	72
Linear Dichroism Conversion in Quasi‐1D Perovskite Chalcogenide Jiangbin Wu, Shanyuan Niu, Fanxin Liu, Advanced Materials	2019	69
Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN Ming Xiao, Zhonghao Du, Jinqiao Xie, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2020	51
Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV Ming Xiao, Yunwei Ma, Zhonghao Du, 2021 IEEE International Electron Devices Meeting (IEDM) EngineeringIntegrated CircuitsPower ElectronicsSemiconductor DeviceQuantum Engineering	2021	48
Tri-gate GaN junction HEMT Yunwei Ma, Ming Xiao, Zhonghao Du, Applied Physics Letters SemiconductorsTri-gate Gan JhemtElectrical EngineeringElectronic DevicesEngineering	2020	41
5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode Ming Xiao, Yunwei Ma, Zhonghao Du, SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2020	36
First Demonstration of Vertical Superjunction Diode in GaN Ming Xiao, Yunwei Ma, Zhonghao Du, 2022 International Electron Devices Meeting (IEDM) Semiconductor TechnologyGan Sj-pndsElectrical EngineeringWide-bandgap SemiconductorEngineering	2022	30
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices Yunwei Ma, Yuan Qin, Matthew Porter, Advanced Electronic Materials Wide-bandgap SemiconductorEngineeringPower ElectronicsSemiconductorsElectronic Devices	2023	30
A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties Hefei Liu, Tong Wu, Xiaodong Yan, Nano Letters	2021	26
Tri-Gate GaN Junction HEMTs: Physics and Performance Space Yunwei Ma, Ming Xiao, Zhonghao Du, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2021	23

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