Growth of c-plane ZnO on γ-LiAlO2 (100) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy

Elastic constants of gallium nitride

A. Polian, M. Grimsditch, I. Grzegory · Journal of Applied Physics · 1996 · 621 citations

Natural Sciences, Materials Science, Physics +13

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 553 citations

Natural Sciences, Materials Engineering, Materials Science +17

Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

R. D. Vispute, V. Talyansky, Supab Choopun et al. · Applied Physics Letters · 1998 · 439 citations

Engineering, Materials Engineering, Materials Science +17

Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy

E. J. Tarsa, B. Heying, Xuemei Wu et al. · Journal of Applied Physics · 1997 · 404 citations

Engineering, Materials Engineering, Materials Science +17

Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

C. G. Dunn, E.F Kogh · Acta Metallurgica · 1957 · 368 citations

Natural Sciences, Materials Engineering, Materials Science +14