Applied Physics Express · 2015 · 16 citations · 22 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportNanoelectronicsSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageBreakdown Voltage OptimizationConductionConduction BandGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesHigh-electron-mobility TransistorsTwo-dimensional Electron Gases
The electrical characteristics of a series of AlInN high-electron-mobility transistors (HEMTs) with a GaN cap layer ranging from 0 to 26 nm are investigated for power switching applications. The breakdown voltage (VB), mobility of two-dimensional electron gas, on-state resistance (Ron), and dynamic Ron of the HEMTs are improved by increasing the cap layer thickness. The improved electrical characteristics are attributed to the GaN cap layer, which not only reduces the surface E-field but also raises the conduction band of the barrier layer and effectively prevents electrons from being trapped in the AlInN barrier and above.
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