Applied Physics Letters · 2002 · 164 citations · 12 references
Materials ScienceSemiconductorsSemiconductor TechnologyX-ray SpectroscopyEngineeringOxide ElectronicsApplied Physicså Sio2/siSemiconductor MaterialValence-band OffsetsChemistryHfo2/sio2/si SystemSynchrotron RadiationSilicon On Insulator
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of −1.05±0.1 eV between HfO2 (in HfO2/15 Å SiO2/Si) and SiO2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Å SiOxNy/Si and HfO2/15 Å SiO2/Si systems.
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Band offsets of wide-band-gap oxides and implications for future electronic devices
John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations
Wide-bandgap Semiconductor, Engineering, Wide-band-gap Oxides +17