Comparison Investigations on the Total Ionizing Dose Radiation of 4H-SiC MOS Structure Prepared With Different Nitrogen Annealing

Abstract

In this article, the effect of the different NO annealing time of 4H-SiC metal-oxide-semiconductor (MOS) capacitance and the n-type MOS field effect transistors (n-MOSFETs) for the total ionizing dose (TID) radiation are studied. We show that after 1250 °C 60 min NO annealing, the device balances between the channel mobility and radiation resistance. The mechanism of the effect of TID on the 4H-SiC gate oxide is studied. And the mechanism of the ledge effect for pMOS is clarified. Furthermore, the electrical characteristics of the n-MOSFET affected by TID are also discussed, showing that TID mainly affects the shift of threshold voltage and inconspicuously affects the channel mobility.