Concepedia

Mechanical-electrical synergy damage effect on GaN HEMT under high-power microwave

Lei Wang, Changchun Chai, Tianlong Zhao, Fu-Xing Li, Yingshuo Qin, Yintang Yang

Science China Technological Sciences · 2023 · 13 citations · 34 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave MaterialsMicrowave Semiconductor DevicesSemiconductor ReliabilityWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice DegradationGallium Nitride (Gan) MaterialsGallium Nitride Microwave Integrated CircuitsGan-based High-frequency DevicesHigh-power MaterialsMicrowave DevicesSemiconductor Materials For Microwave Devices

References

34

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Gaudenzio Meneghesso, G. Verzellesi, Francesca Danesin et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 642 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Very-high power density AlGaN/GaN HEMTs

Yifeng Wu, D. Kapolnek, J. P. Ibbetson et al. · IEEE Transactions on Electron Devices · 2001 · 558 citations

Engineering, Electrical Engineering, Materials Science +17

GaN HEMT reliability

Jesús A. del Alamo, Jungwoo Joh · Microelectronics Reliability · 2009 · 483 citations