Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H–SiC by metal-organic chemical vapor deposition

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Stress relaxation in mismatched layers due to threading dislocation inclination

James S. Speck · Applied Physics Letters · 2003 · 210 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Anti-Surfactant in III-Nitride Epitaxy –Quantum Dot Formation and Dislocation Termination–

Satoru Tanaka, Misaichi Takeuchi, Yoshinobu Aoyagi · Japanese Journal of Applied Physics · 2000 · 166 citations

Engineering, Materials Engineering, Materials Science +17

High efficiency GaN-based LEDs and lasers on SiC

J. A. Edmond, A. Abare, Mike Bergman et al. · Journal of Crystal Growth · 2004 · 139 citations

Engineering, Electrical Engineering, Materials Science +12

Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire

Naoyuki Nakada, Masaharu Nakaji, Hiroyasu Ishikawa et al. · Applied Physics Letters · 2000 · 105 citations · Full text

Engineering, Electrical Engineering, Materials Science +17