Qiuju Feng

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Xiaochuan Xia, Yuanpeng Chen, Qiuju Feng et al. · Applied Physics Letters · 2016 · 169 citations

Engineering, Materials Engineering, Materials Science +17

Catalytic growth and characterization of single crystalline Zn doped p-type β-Ga2O3 nanowires

Qiuju Feng, Jiayuan Liu, Yuqi Yang et al. · Journal of Alloys and Compounds · 2016 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +16

Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient

Jingchang Sun, Hongwei Liang, Jianze Zhao et al. · Chemical Physics Letters · 2008 · 56 citations

Natural Sciences, Materials Science, Physics +15

Electroluminescence from n-ZnO/p-ZnO : Sb homojunction light emitting diode on sapphire substrate with metal–organic precursors doped p-type ZnO layer grown by MOCVD technology

Jie Zhao, Hongwei Liang, Jian Sun et al. · Journal of Physics D Applied Physics · 2008 · 50 citations

Engineering, Electrical Engineering, Materials Science +17

Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition

Pengcheng Tao, Qiuju Feng, Junyan Jiang et al. · Chemical Physics Letters · 2011 · 26 citations

Engineering, Materials Engineering, Materials Science +16