IEEE Transactions on Electron Devices · 2021 · 29 citations · 25 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyField-effect TransistorsIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsP-n JunctionsChannel Doping EffectsCurrent Injection EfficiencyMosfet Modeling
A multiepi (ME) superjunction (SJ) MOSFET with a lightly-doped MOS-channel diode (MCD) is studied by TCAD simulations. When the p-pillar is formed by the ME process, the resistance of the p-pillar can be much higher than that of a uniformly doped p-pillar, which helps to suppress reverse recovery oscillations of the body diode. Besides, by introducing the lightly doped MCD, electrons can easily flow from the n-pillar into the source contact when the body diode is in the ON-state. Thus, the hole injection efficiency of the body diode can be lowered to reduce reverse recovery charge ( Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rr</sub> ) and further suppress reverse recovery oscillations. Simulation results show that the proposed SJ MOSFET is able to obtain a 64% lower Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rr</sub> and much lower reverse recovery oscillations than the conventional SJ MOSFET with a uniformly doped p-pillar.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13