IEEE Electron Device Letters · 2017 · 46 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyMetal-oxide-semiconductor Field-effect TransistorsMetal-semiconductor ContactsCarrier ConcentrationCarrier Concentration OptimizationElectron Work FunctionSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky ContactsWork Function
A novel low-reverse recovery charge superjunction MOSFET (SJ-MOSFET) with a p-type Schottky body diode is proposed in this letter. The device has a p-type Schottky contact on the p-pillar at the drain side. Electrons are prevented from injecting into the drain side by the p-type Schottky contact, and the total carrier concentration is greatly reduced. Compared with the conventional device, the proposed SJ-MOSFET has a lower reverse recovery charge and a larger soft factor. Simulated results show that the reverse recovery charge is reduced by 81.3% and 76.0% at 300 K and 400 K, respectively, with a metal work function of 4.5 eV. The optimized metal work function range is 4.3-4.6 eV.
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