Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Engineering, Sige Alloys, Silicon On Insulator +16

A new recombination model for device simulation including tunneling

G.A.M. Hurkx, D.B.M. Klaassen, M.P.G. Knuvers · IEEE Transactions on Electron Devices · 1992 · 902 citations

Trap-assisted Tunneling, Engineering, Semiconductor Device +18

ASAP7: A 7-nm finFET predictive process design kit

Lawrence T. Clark, Vinay Vashishtha, L. Shifren et al. · Microelectronics Journal · 2016 · 671 citations · Full text

Electrical Engineering, Physical Design (Electronics), Engineering +14

Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature

C. Canali, G. Majni, R. Minder et al. · IEEE Transactions on Electron Devices · 1975 · 639 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

A 14nm logic technology featuring 2<sup>nd</sup>-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm<sup>2</sup> SRAM cell size

S. Natarajan, M. Agostinelli, Sheikh A. Akbar et al. · 2014 · 521 citations

-Generation Finfet, Rectangular Fins, Engineering +16