Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode

Abstract

In this article, a novel reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with embedded diode and p-type Schottky Barrier Diode (p-SBD) is proposed. The two diodes are connected in series through a floating electrode, which provides a current path for carriers in reverse-conducting mode. Compared with the Separated Shorted-Anode RCLIGBT (SSA-RC-LIGBT), the proposed structure not only eliminates the snapback voltage (ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SB</sub> ) but also avoids the waste of device area. Therefore, the superior reverse recovery characteristics and excellent tradeoff relationship between ON-state voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> ) and turn-off loss (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub> ) are obtained. The reverse recovery charge of the proposed RC-LIGBT shows 43.9% and 63.2% reduction compared with those of the SSA-RCLIGBT with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">B</sub> (distance between the p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> collector and the shorted n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> collector) being 34 and 64 μm, respectively. The turn-off loss of the proposed RC-LIGBT at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> = 2.6 V is reduced by 68.2% and 87.1% compared with those of the SSA-RC-LIGBT with ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SB</sub> = 0.48 V and ΔV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SB</sub> = 0.17 V, respectively. Moreover, the proposed RC-LIGBT has a self-adjusted collector injection efficiency under different temperatures to dramatically improve the Short Circuit Safe Operation Area (SCSOA).