The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

Munaf Rahimo, A. Kopta, U. Schlapbach, +3

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Electrical EngineeringSemiconductor DeviceEngineeringPotential TechnologyAdvanced Reverse Conducting +10

4.5kV press pack IGBT designed for ruggedness and reliability

S. Eicher, Munaf Rahimo, Evgeny Tsyplakov, +4

Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.

Electrical EngineeringUnique DesignEngineeringAdvanced Packaging (Semiconductors)Press Pack Igbt +9

Novel Enhanced-Planar IGBT Technology Rated up to 6.5kV for Lower Losses and Higher SOA Capability

Munaf Rahimo, A. Kopta, Stefan Linder

EngineeringEnergy EfficiencyEnhanced-planar Igbt TechnologyPower Electronic SystemsIntegrated Circuits +16

Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes

Munaf Rahimo, A. Kopta, S. Eicher, +2

International Symposium on Power Semiconductor Devices and IC's

Electrical EngineeringDesign PlatformEngineeringHigh Voltage EngineeringPower Device +11

A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Munaf Rahimo, U. Schlapbach, A. Kopta, +3

Low-power ElectronicsElectrical EngineeringEngineeringPower DeviceHigh Current 3300V +11

Limitation of the short-circuit ruggedness of high-voltage IGBTs

A. Kopta, Munaf Rahimo, U. Schlapbach, +2

IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Electrical EngineeringEngineeringDestruction MechanismPower DeviceNanoelectronics +8

The radial layout design concept for the Bi-mode insulated gate transistor

L. Storasta, Munaf Rahimo, Marco Bellini, +3

Device ModelingAnode ShortsElectrical EngineeringOptimized LayoutEngineering +11

Extending the boundary limits of high voltage IGBTs and diodes to above 8 kV

Munaf Rahimo, A. Kopta, S. Eicher, +4

Low-power ElectronicsElectrical EngineeringEngineeringBoundary LimitsHigh Voltage Engineering +12

Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT

J. Vobecký, Munaf Rahimo, A. Kopta, +1

EngineeringVlsi DesignIgbt BufferSilicon Design LimitsPower Electronics +14

A 6.5kV IGBT module with very high safe operating area

A. Kopta, Munaf Rahimo, U. Schlapbach, +3

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005.

Hardware SecurityLow-power ElectronicsElectrical EngineeringNew 6.5Engineering +10