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Switching-self-clamping-mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes
55
Citations
6
References
2004
Year
Electrical EngineeringDesign PlatformEngineeringHigh Voltage EngineeringPower DeviceNanoelectronicsElectronic EngineeringHigh Voltage DevicesApplied PhysicsPower Semiconductor DeviceHigh Voltage IgbtsLow Loss IgbtPower ElectronicsSoa PerformanceMicroelectronicsSemiconductor Device
In this paper, we present a new high voltage IGBT and diode design platform exhibiting the highest SOA limits achieved to date. We demonstrate for the first time, low loss IGBT and diode chip-sets with voltage ratings ranging from 3.3kV to 6.5kV capable of withstanding both dynamic avalanche and what we refer to as the Switching-Self-Clamping-Mode; hence, resulting in a clear breakthrough in SOA capability for high voltage devices.
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