IEEE Electron Device Letters · 2020 · 10 citations · 17 references
EngineeringMaterials EngineeringMaterials ScienceMechanical Behavior Of MaterialsSemiconductor DevicesThin FilmsOrganic SemiconductorsStrain AnalysisStrain EngineeringStrength Of MaterialsStress-strain BehaviorThin-film TransistorsBendingBending Stress AnalysisMechanical Bending ReliabilityOrganic Thin-film TransistorsPolycrystalline SiliconPolycrystalline Silicon Thin-film TransistorsStretchable ElectronicsYoung's Modulus
This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000’WC) compression at R = 2mm. Due to the low Young’s modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
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