Applied Physics Letters · 2010 · 171 citations · 16 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesSemiconductor MaterialsThin FilmsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film TransistorsAmorphous Indium Gallium Zinc OxideAmorphous Oxide SemiconductorsBias Stress EffectsOxide Thin-film TransistorsPlasma TreatmentSemiconductor Oxide Thin FilmsSubthreshold SwingSubthreshold Swing Degradation
A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
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