Mechanical Bending Reliability

Mechanical Bending Reliability is a performance metric that quantifies the ability of a thin-film transistor to maintain its electrical functionality under repeated or sustained mechanical bending stress, distinguishing it from other reliability metrics by specifically addressing deformation-induced degradation in flexible electronics.

21

Publications

642

Citations

129

Authors

39

Institutions

Publications per year

2017–2026

8

Authors

129

  1. TL
    Takhee Lee

    Gwangju Institute of Science and Technology, South Korea

    1 publications · 14 citations

    1

    h-index

  2. SL
    Seung-Jong Lee

    Auburn University, United States

    1 publications · 21 citations

    1

    h-index

  3. TN
    Thomas N. Jackson

    Pennsylvania State University, United States

    1 publications · 36 citations

    1

    h-index

  4. BJ
    Bernt J. Leira

    Norwegian University of Science and Technology, Norway

    1 publications · 31 citations

    1

    h-index

  5. KT
    Kyong Taek Lee

    Samsung (South Korea), South Korea

    1 publications · 16 citations

    1

    h-index

1–5 of 129

Venues

  1. Microelectronics Reliability

    3 publications · 78 citations

    3

    h-index

  2. IEEE Electron Device Letters

    2 publications · 32 citations

    2

    h-index

  3. Nanotechnology

    1 publications · 14 citations

    1

    h-index

  4. IEEE Transactions on Electron Devices

    1 publications · 68 citations

    1

    h-index

  5. Science China Technological Sciences

    1 publications · 19 citations

    1

    h-index

1–5