2019 European Space Power Conference (ESPC) · 2019 · 20 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ReliabilitySemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesOverviewPower ConversionRadiation Effects On ReliabilityRadiation-tolerant Semiconductor DevicesWide Bandgap Semiconductor Applications
GaN technology has gained interest and is becoming widely commercially available due to their superior performances in power conversion applications. The paper shall promote the need for European GaN technology and boost R&D in the technological and reliability field for space. The paper will provide a clear overview on the technology, reliability, radiation, application and market.
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Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
Oliver Hilt, Frank Brunner, E. Cho et al. · 2011 · 118 citations
Engineering, Electrical Engineering, Electronic Materials +15