Journal of Materials Chemistry C · 2019 · 47 citations · 35 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCrystal EngineeringPhotodetectorsPorous MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Crystal GrowthPhotodetector MaterialsPorosity ControlPorous StructuresStructural Characterization Of Porous SolidsUltraviolet Photodetectors
The effects of porous structures on the performance of a GaN UV photodetector were investigated for the first time.
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Luminescence properties of defects in GaN
M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations
X-ray diffraction analysis of the defect structure in epitaxial GaN
H. Heinke, V. Kirchner, S. Einfeldt et al. · Applied Physics Letters · 2000 · 323 citations
Natural Sciences, Materials Engineering, Materials Science +17
Munho Kim, Jung‐Hun Seo, Uttam Singisetti et al. · Journal of Materials Chemistry C · 2017 · 277 citations