Publication | Closed Access
From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
46
Citations
35
References
2019
Year
Wide-bandgap SemiconductorEngineeringGan Uv PhotodetectorUltraviolet PhotodetectorsOptical PropertiesNanoelectronicsPorous StructuresPrecise Structural ControlMaterials ScienceElectrical EngineeringPhotochemistryAluminum Gallium NitrideGallium OxideCategoryiii-v SemiconductorApplied PhysicsPorous Gan CrystalGan Power DeviceOptoelectronicsFirst Time
The effects of porous structures on the performance of a GaN UV photodetector were investigated for the first time.
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