A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices - Concepedia

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A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

17

Citations

0

References

1996

Year

J. De Blauwe, Jan Van Houdt, D. Wellekens, R. Degraeve, Philippe Roussel, L. Haspeslagh, L. Deferm, G. Groeseneken, H.E. Maes

Unknown Venue

Electrical EngineeringEngineeringNew Quantitative ModelSilc-related Disturb CharacteristicsFlash MemoryApplied PhysicsMicroelectronicsFlash E2prom Devices

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