Nanocrystal nonvolatile memory devices

J. De Blauwe

IEEE Transactions on Nanotechnology

Non-volatile MemoryElectrical EngineeringEngineeringPhysicsNanometer-scale Dimensions +9

SILC-related effects in flash E/sup 2/PROM's-Part I: A quantitative model for steady-state SILC

J. De Blauwe, J. van Heudt, D. Wellekens, +2

IEEE Transactions on Electron Devices

Silc-related EffectsElectrical EngineeringSteady-state SilcEngineeringGate Injection Polarity +13

SILC-related effects in flash E/sup 2/PROM's-Part II: Prediction of steady-state SILC-related disturb characteristics

J. De Blauwe, J. van Heudt, D. Wellekens, +2

IEEE Transactions on Electron Devices

Device ModelingSilc-related EffectsElectrical EngineeringEngineeringPhysics +9

A new quantitative model to predict SILC-related disturb characteristics in flash E/sup 2/PROM devices

J. De Blauwe, Jan Van Houdt, D. Wellekens, +6

Materials EngineeringNon-volatile MemoryElectrical EngineeringOxide QualityEngineering +11

A novel, aerosol-nanocrystal floating-gate device for non-volatile memory applications

J. De Blauwe, Michele L. Ostraat, M.L. Green, +15

Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringNanomaterials +9

BiCMOS technology for mixed-digital, analog, and RF applications

D.A. Rich, Michael S. Carroll, M. Frei, +10

IEEE Microwave Magazine

Rf CircuitsEngineeringAnalog DesignSoc SystemsComputer Architecture +15

A new quantitative model to predict SILC-related disturb characteristics in Flash E2PROM devices

J. De Blauwe, Jan Van Houdt, D. Wellekens, +6

Electrical EngineeringEngineeringNew Quantitative ModelSilc-related Disturb CharacteristicsFlash Memory +3

A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

R. Degraeve, J. De Blauwe, J.-L. Ogier, +3

Materials EngineeringChemical EngineeringElectrical EngineeringEngineeringRf Semiconductor +12

Assessment of oxide reliability and hot carrier degradation in CMOS technology

H.E. Maes, G. Groeseneken, R. Degraeve, +2

Microelectronic Engineering

Electrical EngineeringReliability EngineeringEngineeringHot Carrier DegradationHardware Reliability +6

Study of DC Stress Induced Leakage Current (SILC) and its Dependence on Oxide Nitridation

J. De Blauwe, R. Degraeve, R. Bellens, +4

European Solid-State Device Research Conference

Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsStress-induced Leakage Current +10