Publication | Closed Access
A new quantitative model to predict SILC-related disturb characteristics in flash E/sup 2/PROM devices
33
Citations
2
References
2002
Year
Unknown Venue
Materials EngineeringNon-volatile MemoryElectrical EngineeringOxide QualityEngineeringNew Quantitative ModelNanoelectronicsSilc-related Disturb CharacteristicsFlash MemoryApplied PhysicsComputer EngineeringFlash E/sup 2/PromElectronic PackagingDisturb BehaviorMicroelectronicsElectromagnetic Compatibility
A new quantitative model is developed that allows an excellent prediction of the disturb behavior of tunnel oxide flash E/sup 2/PROM devices after write/erase cycling and provides a well-understood and consistent cell optimization procedure. This model requires as only input a measurement of the oxide quality on capacitors and transistors, and some basic cell characteristics.
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