Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate

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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

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Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture

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AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes

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