Daniel Feezell

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Steven P. DenBaars, Daniel Feezell, Katheryn Kelchner et al. · Acta Materialia · 2013 · 435 citations

White Oled, Photonics, Electrical Engineering +10

Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Daniel Feezell, James S. Speck, Steven P. DenBaars et al. · Journal of Display Technology · 2013 · 325 citations

Quantum Photonics, Optical Materials, Engineering +16

Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes

Mathew C. Schmidt, Kwang-Choong Kim, Robert M. Farrell et al. · Japanese Journal of Applied Physics · 2007 · 217 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

Yuji Zhao, Shinichi Tanaka, Chih‐Chien Pan et al. · Applied Physics Express · 2011 · 191 citations

Engineering, Nanoelectronics, Light-emitting Diodes +17

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

Yuji Zhao, Qimin Yan, Chia‐Yen Huang et al. · Applied Physics Letters · 2012 · 185 citations

Wide-bandgap Semiconductor, Engineering, Emission Properties +16