IEEE Transactions on Electron Devices · 2019 · 15 citations · 24 references
EngineeringElectrical EngineeringAnalog ElectronicsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDigital Integrated Circuit DesignDigital Integrated CircuitsHigh-frequency Semiconductor DevicesIntegrated Circuit DevicesLow-power Digital Circuit DesignBipolar TechnologyComparator DesignComparatorsHigh-temperature ElectronicsRise TimeSilicon CarbideSilicon Carbide (Sic) MaterialsTemperature Dependence
This paper reports an industry standard monolithic 555-timer circuit designed and fabricated in the in-house silicon carbide (SiC) low-voltage bipolar technology. This paper demonstrates the 555-timer integrated circuits (ICs) characterization in both astable and monostable modes of operation, with a supply voltage of 15 V over the wide temperature range of 25°C-500°C. Nonmonotonic temperature dependence was observed for the 555-timer IC frequency, rise time, fall-time, and power dissipation.
24
500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC
Luigia Lanni, B. Gunnar Malm, Mikael Östling et al. · IEEE Electron Device Letters · 2013 · 91 citations · Full text
High Temperature Silicon Carbide CMOS Integrated Circuits
David Clark, Ewan P. Ramsay, A.E. Murphy et al. · Materials science forum · 2011 · 88 citations · Full text