Concepedia

Ferroelectric HfZrO2 FETs for steep switch onset

K.-T. Chen, C.-Y. Liao, Hsin-Chin Chen, Chieh Lo, G.-Y. Siang, Y.-Y. Lin, Yi‐Ju Tseng, Chih‐Wei Chang, C.-Y. Chueh, Y.-J. Yang,

Microelectronic Engineering · 2019 · 13 citations · 7 references

DOI

Concepts

References

7

Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

Sayeef Salahuddin, Supriyo Datta · Nano Letters · 2007 · 2.1K citations

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Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y.-T. Wei, Kuan-Wei Chu et al. · IEEE Electron Device Letters · 2015 · 151 citations

, , +14

Non-Volatile Ferroelectric FETs Using 5-nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With High Data Retention and Read Endurance for 1T Memory Applications

K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao et al. · IEEE Electron Device Letters · 2019 · 118 citations

, , +13

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf<sub>0.8</sub>Zr<sub>0.2</sub>O<sub>2</sub>, High Endurance and Breakdown Recovery

Korok Chatterjee, Sangwan Kim, Golnaz Karbasian et al. · IEEE Electron Device Letters · 2017 · 102 citations

, , +17

Size effect on the ferroelectric phase transition in SrBi2Ta2O9 nanoparticles

Ting Yu, Zexiang Shen, Wei Seng Toh et al. · Journal of Applied Physics · 2003 · 86 citations

, , +15