Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

Sayeef Salahuddin, Supriyo Datta

Nano Letters

EngineeringNanocomputingPower ElectronicsNanoelectronicsElectronic Engineering +15

Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

M. H. Lee, Y.-T. Wei, Kuan-Wei Chu, +8

IEEE Electron Device Letters

Ferroelectric Type HzoEngineeringSemiconductor DeviceFerroelectric ApplicationNanoelectronics +14

Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ With High Data Retention and Read Endurance for 1T Memory Applications

K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao, +6

IEEE Electron Device Letters

Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyMemory Operations +16

Self-Aligned, Gate Last, FDSOI, Ferroelectric Gate Memory Device With 5.5-nm Hf_0.8Zr_0.2O₂, High Endurance and Breakdown Recovery

Korok Chatterjee, Sangwan Kim, Golnaz Karbasian, +5

IEEE Electron Device Letters

Non-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access MemoryRead Endurance +15

Size effect on the ferroelectric phase transition in SrBi2Ta2O9 nanoparticles

Ting Yu, Zexiang Shen, Wei Seng Toh, +2

Journal of Applied Physics

Materials ScienceEngineeringFerroelectric ApplicationNanomaterialsNanotechnology +10

Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

M. H. Lee, Y.-T. Wei, C. Liu, +9

IEEE Journal of the Electron Devices Society

EngineeringSemiconductor DeviceMultiferroicsFerroelectric ApplicationQuantum Materials +14

Ferroelectric gate tunnel field-effect transistors with low-power steep turn-on

M. H. Lee, Y.-T. Wei, Jhe-Cyun Lin, +3

AIP Advances

Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringFerroelectric Application +8