Ferroelectricity of HfZrO<sub>2</sub> in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Abstract

The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$I_{\rm DS} $ </tex-math></inline-formula> . A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.