C.-Y. Liao

Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ With High Data Retention and Read Endurance for 1T Memory Applications

K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao et al. · IEEE Electron Device Letters · 2019 · 118 citations

Natural Sciences, Electrical Engineering, Materials Science +13

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh et al. · IEEE Electron Device Letters · 2021 · 81 citations

Engineering, Electrical Engineering, Materials Science +11

Ferroelectric HfZrO₂ With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen et al. · IEEE Transactions on Electron Devices · 2020 · 55 citations

Engineering, Materials Engineering, Materials Science +14

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K.-T. Chen, C.-Y. Liao et al. · 2018 · 45 citations

Engineering, Electrical Engineering, Microelectronics +12

Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETs

M. H. Lee, P.-G. Chen, Sheng-Ting Fan et al. · 2017 · 42 citations

Natural Sciences, Electrical Engineering, Materials Science +13