C.-Y. Liao - Concepedia

Author

C.-Y. Liao

Also Known As

C-Y Liao, C.-Y. Liao, Chang-Jing Liao, Chi-hsiang Liao, Chieh-Yu Liao, Chih-Chieh Liao, Chun-Yu Liao, Chung-Jie Liao, Liao, C.-Y., M.-H. Liao

Publications

627

Citations

H-Index

Concepts

All Affiliations

National Taiwan Normal University National Taiwan University National Yang Ming Chiao Tung University National Chung Hsing University Taiwan Semiconductor Manufacturing Company (Taiwan)

About

C.-Y. Liao is an author at National Taiwan Normal University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	491
2	Applied Physics	11	11	453
3	Computer Engineering	3	3	153
4	Language Studies	1	1	28
5	Social Sciences	1	1	53

C.-Y. Liao

Publications

551

Citations

H-Index

Page 1

	Year	Citations
Non-Volatile Ferroelectric FETs Using 5-nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With High Data Retention and Read Endurance for 1T Memory Applications K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao, IEEE Electron Device Letters Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyMemory Operations	2019	115
Multibit Ferroelectric FET Based on Nonidentical Double HfZrO<sub>2</sub> for High-Density Nonvolatile Memory C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh, IEEE Electron Device Letters Non-volatile MemoryMagnetic PropertiesEngineeringEmerging Memory TechnologyMultibit Ferroelectric Fet	2021	76
Ferroelectric HfZrO<sub>2</sub> With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, IEEE Transactions on Electron Devices EngineeringSocial SciencesStimulation SchemesFerroelectric ApplicationMetallic Functional Material	2020	53
Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs M. H. Lee, K.-T. Chen, C.-Y. Liao, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2018	45
Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETs M. H. Lee, P.-G. Chen, Sheng-Ting Fan, Materials ScienceElectrical EngineeringMultiferroicsDielectricsMagnetic Properties	2017	41
Bilayer-Based Antiferroelectric HfZrO<sub>2</sub> Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory K.-Y. Hsiang, C.-Y. Liao, Jun Liu, IEEE Electron Device Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyElectronic DevicesTunneling Microscopy	2021	30
Golden Mandarin (II)-an improved single-chip real-time Mandarin dictation machine for Chinese language with very large vocabulary L.-s. Lee, Chih‐Huang Tseng, Kexin Chen, IEEE International Conference on Acoustics Speech and Signal Processing Artificial IntelligenceEngineeringGolden MandarinLarge VocabularySpoken Language Processing	1993	28
Atomic Layer Deposition Plasma-Based Undoped-HfO<sub>2</sub> Ferroelectric FETs for Non-Volatile Memory Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang, IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringMultiferroicsEngineering	2021	23
Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<sub>2</sub> Capacitor with Molybdenum Capping Electrode K.-T. Chen, M. H. Lee, C.-Y. Liao, 2019 Electron Devices Technology and Manufacturing Conference (EDTM) Materials ScienceMaterials EngineeringElectrical EngineeringTan ElectrodeEngineering	2019	22
Endurance > 10<sup>11</sup> Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO<sub>2</sub> to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) Materials ScienceSemiconductor TechnologyElectrical EngineeringMultiferroicsEngineering	2022	21

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