C.-Y. Liao

Non-Volatile Ferroelectric FETs Using 5-nm Hf_0.5Zr_0.5O₂ With High Data Retention and Read Endurance for 1T Memory Applications

K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao et al. · IEEE Electron Device Letters · 2019 · 115 citations

Non-volatile Memory, Engineering, Vlsi Design +18

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh et al. · IEEE Electron Device Letters · 2021 · 76 citations

Non-volatile Memory, Magnetic Properties, Engineering +20

Ferroelectric HfZrO₂ With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen et al. · IEEE Transactions on Electron Devices · 2020 · 53 citations

Engineering, Social Sciences, Stimulation Schemes +17

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K.-T. Chen, C.-Y. Liao et al. · 2018 · 45 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +9

Ferroelectric Al:HfO<inf>2</inf> negative capacitance FETs

M. H. Lee, P.-G. Chen, Sheng-Ting Fan et al. · 2017 · 41 citations

Materials Science, Electrical Engineering, Multiferroics +14