Fan-Chun Hsieh

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh et al. · IEEE Electron Device Letters · 2021 · 81 citations

Engineering, Electrical Engineering, Materials Science +11

Bilayer-Based Antiferroelectric HfZrO₂ Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

K.-Y. Hsiang, C.-Y. Liao, Jun Liu et al. · IEEE Electron Device Letters · 2021 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +15

Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide

Wei-Ting Wu, Bing‐Yue Tsui, Y.P. Huang et al. · IEEE Electron Device Letters · 2006 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 23 citations

Engineering, Electrical Engineering, Materials Science +17

Pumping performance analysis on turbomolecular pump

Fan-Chun Hsieh, Ping-Hung Lin, Daren Liu et al. · Vacuum · 2011 · 14 citations

Engineering, Mechanical Engineering, Fluid Dynamics +9