K.-Y. Hsiang

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

C.-Y. Liao, K.-Y. Hsiang, Fan-Chun Hsieh et al. · IEEE Electron Device Letters · 2021 · 81 citations

Engineering, Electrical Engineering, Materials Science +11

Ferroelectric HfZrO₂ With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training

K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen et al. · IEEE Transactions on Electron Devices · 2020 · 55 citations

Engineering, Materials Engineering, Materials Science +14

Bilayer-Based Antiferroelectric HfZrO₂ Tunneling Junction With High Tunneling Electroresistance and Multilevel Nonvolatile Memory

K.-Y. Hsiang, C.-Y. Liao, Jun Liu et al. · IEEE Electron Device Letters · 2021 · 35 citations

Natural Sciences, Materials Engineering, Materials Science +15

Atomic Layer Deposition Plasma-Based Undoped-HfO₂ Ferroelectric FETs for Non-Volatile Memory

Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang et al. · IEEE Electron Device Letters · 2021 · 24 citations

Natural Sciences, Materials Science, Physics +16

Endurance > 10¹¹ Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO₂ to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao, K.-Y. Hsiang, Zaizhu Lou et al. · 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 2022 · 23 citations

Engineering, Electrical Engineering, Materials Science +17