K.-T. Chen - Concepedia

Author

K.-T. Chen

National Chung Hsing University

Also Known As

K.-T. Chen, Kuo‐Ju Chen

Publications

453

Citations

H-Index

Concepts

All Affiliations

National Chung Hsing University National Taiwan University National Taiwan Normal University Taiwan Semiconductor Manufacturing Company (Taiwan)National Yang Ming Chiao Tung University

About

K.-T. Chen is an author at National Chung Hsing University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	6	6	373
2	Applied Physics	5	5	355
3	Electrical Engineering	4	4	235
4	Social Sciences	1	1	53
5	Computer Engineering	1	1	115

K.-T. Chen

Publications

417

Citations

H-Index

Page 1

	Year	Citations
Resonant‐Enhanced Full‐Color Emission of Quantum‐Dot‐Based Display Technology Using a Pulsed Spray Method K.-T. Chen, Hsin‐Chu Chen, Kai‐An Tsai, Advanced Functional Materials Optical MaterialsEngineeringOptoelectronic DevicesRgb QdsRgb Color	2012	120
Non-Volatile Ferroelectric FETs Using 5-nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With High Data Retention and Read Endurance for 1T Memory Applications K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao, IEEE Electron Device Letters Non-volatile MemoryEngineeringVlsi DesignEmerging Memory TechnologyMemory Operations	2019	115
Ferroelectric HfZrO<sub>2</sub> With Electrode Engineering and Stimulation Schemes as Symmetric Analog Synaptic Weight Element for Deep Neural Network Training K.-Y. Hsiang, C.-Y. Liao, K.-T. Chen, IEEE Transactions on Electron Devices EngineeringSocial SciencesStimulation SchemesFerroelectric ApplicationMetallic Functional Material	2020	53
Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs M. H. Lee, K.-T. Chen, C.-Y. Liao, Device ModelingSemiconductor TechnologyElectrical EngineeringEngineeringNanoelectronics	2018	45
Multiplicity of steady solutions in a two-sided lid-driven cavity with different aspect ratios K.-T. Chen, Ching‐Chih Tsai, Win‐Jet Luo, Theoretical and Computational Fluid Dynamics Different Aspect RatiosSteady SolutionsTwo-sided Lid-driven Cavity	2013	22
Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<sub>2</sub> Capacitor with Molybdenum Capping Electrode K.-T. Chen, M. H. Lee, C.-Y. Liao, 2019 Electron Devices Technology and Manufacturing Conference (EDTM) Materials ScienceMaterials EngineeringElectrical EngineeringTan ElectrodeEngineering	2019	22
Aspect Ratio Effect on Multiple Flow Solutions in a Two-Sided Parallel Motion Lid-Driven Cavity K.-T. Chen, Ching‐Chih Tsai, Win‐Jet Luo, Journal of Mechanics AeroacousticsUnsteady FlowEngineeringContinuation MethodFluid Mechanics	2014	18
Ferroelectric HfZrO2 FETs for steep switch onset K.-T. Chen, C.-Y. Liao, Hsin-Chin Chen, Microelectronic Engineering	2019	12
Bi-directional Sub-60mV/dec, Hysteresis-Free, Reducing Onset Voltage and High Speed Response of Ferroelectric-AntiFerroelectric Hf<sub>0.25</sub>Zr<sub>0.75</sub>O<sub>2</sub> Negative Capacitance FETs M. H. Lee, K.-T. Chen, C.-Y. Liao,	2019	10

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