Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO₂ Capacitor with Molybdenum Capping Electrode

Abstract

The capping metal plays an important role on HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) $\mu$ C/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> up to 2x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> sec and slightly degradation extrapolated to 3x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> sec (10 years). The Mo electrode exhibits higher 2P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">r</sub> and excellent endurance performance ((>10) <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.