Concepedia

G.-Y. Siang

GS

Statistics

Publications

6

Citations

226

H-Index

6

Active since

2018

Affiliations

National Taiwan University(Current)

National Taiwan Normal University

National Chung Hsing University

National Institutes of Applied Research

Taiwan Semiconductor Manufacturing Company (Taiwan)

G.-Y. Siang is an author at National Taiwan University specializing in electronic materials, materials science, and semiconductor devices.

Publications per year

2018–2019

6

Publications

6

Non-Volatile Ferroelectric FETs Using 5-nm Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With High Data Retention and Read Endurance for 1T Memory Applications

K.-T. Chen, Hsin-Chin Chen, C.-Y. Liao et al. · IEEE Electron Device Letters · 2019 · 118 citations

Natural Sciences, Electrical Engineering, Materials Science +13

Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs

M. H. Lee, K.-T. Chen, C.-Y. Liao et al. · 2018 · 45 citations

Engineering, Electrical Engineering, Microelectronics +12

Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO<sub>2</sub> Capacitor with Molybdenum Capping Electrode

K.-T. Chen, M. H. Lee, C.-Y. Liao et al. · 2019 Electron Devices Technology and Manufacturing Conference (EDTM) · 2019 · 23 citations

Natural Sciences, Materials Engineering, Materials Science +15

Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Kuan‐Ting Chen, Chieh Lo, Pin-Guang Chen et al. · IEEE Journal of the Electron Devices Society · 2018 · 16 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Ferroelectric HfZrO2 FETs for steep switch onset

K.-T. Chen, C.-Y. Liao, Hsin-Chin Chen et al. · Microelectronic Engineering · 2019 · 13 citations

Natural Sciences, Electrical Engineering, Materials Science +13

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