Jun-Dao Luo

Impact of the Stacking Order of HfO_<i>x</i> and AlO_<i>x</i> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

Kai-Chi Chuang, Chi-Yan Chu, Hexin Zhang et al. · IEEE Journal of the Electron Devices Society · 2019 · 43 citations · Full text

Atomic Layer Deposition Plasma-Based Undoped-HfO₂ Ferroelectric FETs for Non-Volatile Memory

Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang et al. · IEEE Electron Device Letters · 2021 · 23 citations

Materials Science, Non-volatile Memory, Electrical Engineering +15

High-Performance Germanium Thin-Film Transistors With Single-Crystal-Like Channel via Continuous-Wave Laser Crystallization

Yi-Shao Li, Chun-Yi Wu, Chan-Yu Liao et al. · IEEE Electron Device Letters · 2018 · 13 citations

Materials Science, Electrical Engineering, Engineering +11

High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation

Yi-Shao Li, Hao-Hsiang Liang, Chun-Yi Wu et al. · Japanese Journal of Applied Physics · 2019 · 12 citations · Full text

Optical Materials, Engineering, Crystal Growth Technology +16

Ferroelectric Undoped HfO_<i>x</i> Capacitor With Symmetric Synaptic for Neural Network Accelerator

Jun-Dao Luo, Yu‐Ying Lai, K.-Y. Hsiang et al. · IEEE Transactions on Electron Devices · 2021 · 11 citations

Materials Science, Switching Endurance, Multiferroics +13