<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Abstract

We present our latest results on L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> = 87 nm InAlAs/InGaAs high-electron-mobility transistors with an excellent combination of dc and high-frequency characteristics. We obtained a maximum transconductance of 3 S/mm at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</sub> = 0.9 V, an ON-resistance of 273 Ω-μm, a current gain cutoff frequency of 559 GHz, and a maximum oscillation frequency of 671 GHz. According to small-signal modeling, these outstanding device metrics are a consequence of the indium-rich InGaAs channel with very high Hall mobility, compact device design with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</sub> = 1 μm, and an optimized gate process that yields well-tempered behavior.