Do-Young Yun

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

Hyeon-Bhin Jo, Do-Young Yun, Ji-Min Baek et al. · Applied Physics Express · 2019 · 46 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Hyeon-Bhin Jo, Ji-Min Baek, Do-Young Yun et al. · IEEE Electron Device Letters · 2018 · 29 citations

Engineering, Electrical Engineering, Materials Science +12

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

Do-Young Yun, Hyeon-Bhin Jo, Seungwoo Son et al. · IEEE Electron Device Letters · 2018 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

L_g = 19 nm In_0.8Ga_0.2As composite-channel HEMTs with f_T = 738 GHz and f_max = 492 GHz

Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim et al. · 2020 · 17 citations

Engineering, Electrical Engineering, Materials Science +8