Ji-Min Baek

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

Hyeon-Bhin Jo, Do-Young Yun, Ji-Min Baek et al. · Applied Physics Express · 2019 · 44 citations · Full text

Electrical Engineering, Engineering, High-speed Electronics +11

<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Hyeon-Bhin Jo, Ji-Min Baek, Do-Young Yun et al. · IEEE Electron Device Letters · 2018 · 29 citations

Wide-bandgap Semiconductor, Indium-rich Ingaas Channel, Electrical Engineering +12

Influence of Branched Alkyl Ester-Labeled Side Chains on Specific Chain Arrangement and Charge-Transport Properties of Diketopyrrolopyrrole-Based Conjugated Polymers

Hyung Jong Kim, Mingyuan Pei, Joong Se Ko et al. · ACS Applied Materials & Interfaces · 2018 · 23 citations

Dppbt-based Copolymers, Charge-transport Properties, Engineering +17

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

Do-Young Yun, Hyeon-Bhin Jo, Seungwoo Son et al. · IEEE Electron Device Letters · 2018 · 19 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Sub-30-nm In_0.8Ga_0.2As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim et al. · IEEE Transactions on Electron Devices · 2021 · 17 citations

Semiconductors, Record High-frequency Characteristics, Electrical Engineering +13