Concepedia

Hyeon-Bhin Jo

HJ

Statistics

Publications

6

Citations

139

H-Index

6

Active since

2018

Affiliations

University of Ulsan(Current)

Kyungpook National University

Hyeon-Bhin Jo is an author at University of Ulsan specializing in electrical engineering, applied physics, and engineering.

Top concepts

PhysicsEngineeringApplied PhysicsElectrical EngineeringElectronic EngineeringMicroelectronicsNanoelectronicsMicrowave EngineeringAntennaSemiconductors

Publications per year

2018–2023

6

Publications

6

L<sub>g</sub> = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f<sub>T</sub> and f<sub>max</sub> in excess of 700 GHz

Hyeon-Bhin Jo, Do-Young Yun, Ji-Min Baek et al. · Applied Physics Express · 2019 · 44 citations · Full text

Electrical Engineering, Engineering, High-speed Electronics +11

<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> <sub>m_max</sub> of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Hyeon-Bhin Jo, Ji-Min Baek, Do-Young Yun et al. · IEEE Electron Device Letters · 2018 · 29 citations

Wide-bandgap Semiconductor, Indium-rich Ingaas Channel, Electrical Engineering +12

Impact of the Source-to-Drain Spacing on the DC and RF Characteristics of InGaAs/InAlAs High-Electron Mobility Transistors

Do-Young Yun, Hyeon-Bhin Jo, Seungwoo Son et al. · IEEE Electron Device Letters · 2018 · 19 citations

Electrical Engineering, Engineering, Rf Semiconductor +10

Sub-30-nm In<sub>0.8</sub>Ga<sub>0.2</sub>As Composite-Channel High-Electron-Mobility Transistors With Record High-Frequency Characteristics

Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim et al. · IEEE Transactions on Electron Devices · 2021 · 17 citations

Semiconductors, Record High-frequency Characteristics, Electrical Engineering +13

L<sub>g</sub> = 19 nm In<sub>0.8</sub>Ga<sub>0.2</sub>As composite-channel HEMTs with f<sub>T</sub> = 738 GHz and f<sub>max</sub> = 492 GHz

Hyeon-Bhin Jo, Seung-Won Yun, Jun-Gyu Kim et al. · 2020 · 16 citations

Device Modeling, Electrical Engineering, Semiconductor Device +15

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