Effects of polycrystalline AlN film on the dynamic performance of AlGaN/GaN high electron mobility transistors

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

Engineering, Electrical Engineering, Materials Science +17

GaN Power Transistors on Si Substrates for Switching Applications

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi et al. · Proceedings of the IEEE · 2010 · 522 citations

Engineering, Electrical Engineering, Materials Science +17

Capacitance–Voltage Characteristics of Al₂O₃/AlGaN/GaN Structures and State Density Distribution at Al₂O₃/AlGaN Interface

Chihoko Mizue, Yujin Hori, Marcin Miczek et al. · Japanese Journal of Applied Physics · 2011 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Dislocation scattering in a two-dimensional electron gas

Debdeep Jena, A. C. Gossard, Umesh K. Mishra · Applied Physics Letters · 2000 · 243 citations · Full text

Engineering, Electrical Engineering, Physics +17