Novel Ultrathin FD-SOI BiMOS Device With Reconfigurable Operation

Abstract

Ultrathin bipolar + MOS (BiMOS) transistors were fabricated with 28-nm Ultra Thin Body and Buried oxide (UTBB) FD-SOI high-k metal gate technology for the first time. We evaluate the device behavior through dc/transmission line pulse measurements and 3-D TCAD simulations. The BiMOS demonstrates excellent MOS and hybrid behavior, with base as potential reference, exhibiting modulated apparent gain β <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">A</sub> (~7 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> for the smallest base width) that can be controlled by the front and/or back gates. The mechanism of operation and further device optimizations are discussed. In addition, the device can work in four-gate FET mode with the two lateral junctions controlling the channel formation. For electrostatic discharge applications, triggering voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t1</sub> and leakage current can be modulated with an external resistor in two-terminal mode without requiring any external biasing.