Philippe Galy

Cryogenic Subthreshold Swing Saturation in FD-SOI MOSFETs Described With Band Broadening

Heorhii Bohuslavskyi, A. G. M. Jansen, Sylvain Barraud et al. · IEEE Electron Device Letters · 2019 · 147 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration

Philippe Galy, Julien Camirand Lemyre, Pierre F. Lemieux et al. · IEEE Journal of the Electron Devices Society · 2018 · 107 citations · Full text

Engineering, Electrical Engineering, Physics +17

Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing

Bruna Cardoso Paz, Loïck Le Guevel, M. Cassé et al. · 2020 · 64 citations

Engineering, Electrical Engineering, Physics +17

Extended Analysis of the $Z^{2}$ -FET: Operation as Capacitorless eDRAM

Carlos Navarro, J. Lacord, Mukta Singh Parihar et al. · IEEE Transactions on Electron Devices · 2017 · 39 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16

First demonstration of a full 28nm high-k/metal gate circuit transfer from Bulk to UTBB FDSOI technology through hybrid integration

Dominique Golanski, P. Fonteneau, C. Fenouillet-Béranger et al. · 2013 · 31 citations

Engineering, Computer Engineering, Electrical Engineering +14