Bruna Cardoso Paz

Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing

Bruna Cardoso Paz, Loïck Le Guevel, M. Cassé et al. · 2020 · 61 citations

Ul T, Vlsi Design, Ultra Low Temperatures +21

Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications

Bruna Cardoso Paz, M. Cassé, Christoforos Theodorou et al. · IEEE Transactions on Electron Devices · 2020 · 59 citations · Full text

Engineering, Vlsi Design, Back Bias Impact +17

Charge-based compact analytical model for triple-gate junctionless nanowire transistors

Fernando Avila Herrera, Bruna Cardoso Paz, A. Cerdeira et al. · Solid-State Electronics · 2016 · 40 citations

Device Modeling, Electrical Engineering, Engineering +4

Low-power transimpedance amplifier for cryogenic integration with quantum devices

Loïck Le Guevel, G. Billiot, Bruna Cardoso Paz et al. · Applied Physics Reviews · 2020 · 37 citations · Full text

Categoryquantum Electronics, Engineering, Optoelectronic Devices +19

Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature

Bruna Cardoso Paz, M. Cassé, S. Haendler et al. · Solid-State Electronics · 2021 · 29 citations · Full text

Electrical Engineering, Engineering, Physics +7