Deep ultraviolet light‐emitting diodes

Abstract

Abstract We report on the development of AlGaN‐based deep UV light emitting diodes (LEDs) with emission wavelengths from 254 to 340 nm, focusing on the improvement of 280 nm LEDs efficiency. Under optimal device structure the UV LEDs efficiency was found to strongly depend on the AlGaN material quality. Milliwatt‐power level LEDs were demonstrated for the 254–340 nm spectral range, and for 280 nm LEDs powers reaching 2.5 mW was achieved at 20 mA DC. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)