J. Deng

AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Jianping Zhang, X. Hu, Yu. Bilenko et al. · Applied Physics Letters · 2004 · 109 citations

Engineering, Power Electronics, Luminescence Property +17

Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power

Wenhong Sun, M. Shatalov, J. Deng et al. · Applied Physics Letters · 2010 · 107 citations

Semiconductors, Photonics, Electrical Engineering +14

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

Rahul Jain, Wenhong Sun, Jinwei Yang et al. · Applied Physics Letters · 2008 · 98 citations

Aluminium Nitride, Lateral Epitaxial Overgrowth, Wide-bandgap Semiconductor +16

AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN

X. Hu, J. Deng, Nezih Pala et al. · Applied Physics Letters · 2003 · 92 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +12

Deep ultraviolet light‐emitting diodes

X. Hu, J. Deng, Jianping Zhang et al. · physica status solidi (a) · 2006 · 70 citations · Full text

Photonics, Ultraviolet Light, Optical Materials +13