2004 · 36 citations · 13 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsNanotechnologySemiconductor DevicesDevice ModelingDevice ScalingDevice SimulationNanoelectronicsNanoscale MaterialsShort-channel EffectsChannel Length ScalingDevice Scaling EffectsNanoelectronic Device PhysicsNanoscale TransistorsPhysics-based Device ModelingScaling EffectsScaling TheoryTechnology Scaling
This paper reviews our efforts to use theory and simulation to understand the device physics of nanoscale MOSFETs. The essential physics of MOSFETs at the scaling limit are discussed, and unresolved theoretical issues and technological ones that limit device performance and ultimate scaling are identified.
13
Theory of ballistic nanotransistors
Anisur Rahman, Jing Guo, Supriyo Datta et al. · IEEE Transactions on Electron Devices · 2003 · 773 citations
Elementary scattering theory of the Si MOSFET
Mark Lundstrom · IEEE Electron Device Letters · 1997 · 585 citations
Two-dimensional quantum mechanical modeling of nanotransistors
A. Svizhenko, M. P. Anantram, T. R. Govindan et al. · Journal of Applied Physics · 2002 · 464 citations · Full text