2002 · 64 citations · 4 references
Cmos Logic ProcessChemical EngineeringElectrical EngineeringEngineeringVlsi DesignCircuit DesignProm ElementNovel Programmable ElementCircuit SystemElectronic DesignComputer EngineeringComputer ArchitectureSystems EngineeringProgrammable DeviceNovel ProgrammingMicroelectronicsSalicide AgglomerationBeyond Cmos
A novel programmable element has been developed and evaluated for state of the art CMOS processes. This element is based on agglomeration of the Ti-silicide layer on top of poly fuses. Various aspects of this programmable device including characterization and optimization of physical and electrical aspects of the element, programming yield, and reliability have been studied. Development of a novel programming and sensing circuit is also included.
4
A high performance 0.25 μm logic technology optimized for 1.8 V operation
M. Bohr, S.S. Ahmed, S. Ahmed et al. · 2002 · 65 citations
A Ti salicide process for 0.10 μm gate length CMOS technology
J. A. Kittl, Qi‐Zhong Hong, M. Redder et al. · 2002 · 25 citations
Low-power Electronics, Electrical Engineering, Engineering +9