A PROM element based on salicide agglomeration of poly fuses in a CMOS logic process

M. Alavi, M. Bohr, J. Hicks, M. Denham, A. Cassens, D. Douglas, Ming-Yan Tsai

2002 · 64 citations · 4 references

Concepts

Abstract

A novel programmable element has been developed and evaluated for state of the art CMOS processes. This element is based on agglomeration of the Ti-silicide layer on top of poly fuses. Various aspects of this programmable device including characterization and optimization of physical and electrical aspects of the element, programming yield, and reliability have been studied. Development of a novel programming and sensing circuit is also included.

References

4