2002 · 11 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignMemory DevicesMemory Subsystem DesignFlash MemoryFlash Memory DevicesFlash Memory ProgrammingLow-power Memory ArchitectureMemory Circuit DesignNon-volatile Memory Design
A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain voltage of 5 V. It also provides a read-out current higher than 100 mu A and a soft-write lifetime greater than 10 years in read operation. The cell is suitable for high-density flash memories beyond 16 M bits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A new flash-erase EEPROM cell with a sidewall select-gate on its source side
Kiyomi Naruke, Shigeru Yamada, E. Obi et al. · 2003 · 34 citations
Engineering, Computer Engineering, Electrical Engineering +17
A 5 volt only 16M bit flash EEPROM cell with a simple stacked gate structure
N. Ajika, M. Ohi, Hideaki Arima et al. · 2002 · 30 citations
Engineering, Computer Engineering, Electrical Engineering +17