M. Ohi

Chemical Bonds at and Near the SiO₂/Si Interface

Takeo Hattori, Takayuki Igarashi, M. Ohi et al. · Japanese Journal of Applied Physics · 1989 · 37 citations

Materials Science, Chemical Bonds, Engineering +14

A 5 volt only 16M bit flash EEPROM cell with a simple stacked gate structure

N. Ajika, M. Ohi, Hideaki Arima et al. · 2002 · 30 citations

Non-volatile Memory, Electrical Engineering, Conventional 0.6 +10

A new erasing and row decoding scheme for low supply voltage operation 16-Mb/64-Mb flash memories

Y. Miyawaki, Toshinori Nakayama, S. Kobayashi et al. · IEEE Journal of Solid-State Circuits · 1992 · 18 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

A 60-ns 16-Mb flash EEPROM with program and erase sequence controller

Toshinori Nakayama, S. Kobayashi, Y. Miyawaki et al. · IEEE Journal of Solid-State Circuits · 1991 · 16 citations

Non-volatile Memory, Engineering, Computer Architecture +17

Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided Polysilicon

N. Ajika, M. Ohi, Hideo Arima et al. · 1991 · 13 citations

Materials Science, Materials Engineering, Electrical Engineering +15